Lateral devices containing permanent charge

ABSTRACT

A lateral device includes a gate region connected to a drain region by a drift layer. An insulation region adjoins the drift layer between the gate region and the drain region. Permanent charges are embedded in the insulation region, sufficient to cause inversion in the insulation region.

CROSS-REFERENCE TO OTHER APPLICATION

Priority is claimed from U.S. Provisional Application 61/084,639, filedJul. 30, 2008, which is hereby incorporated by reference.

BACKGROUND

The present application relates to lateral power switches, and moreparticularly to lateral power semiconductor devices having insulationmaterial including permanent electrostatic charges.

Note that the points discussed below may reflect the hindsight gainedfrom the disclosed inventions, and are not necessarily admitted to beprior art.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosed inventions will be described with reference to theaccompanying drawings, which show important sample embodiments of theinvention and which are incorporated in the specification hereof byreference, wherein:

FIG. 1 is a structural diagram depicting a lateral device in accordancewith an embodiment;

FIG. 2(a) is a structural diagram depicting a lateral device inaccordance with an embodiment;

FIG. 2(b) is a structural diagram depicting a lateral device inaccordance with an embodiment;

FIG. 2(c) is a structural diagram depicting a lateral device inaccordance with an embodiment;

FIG. 3 is a structural diagram depicting a lateral device in accordancewith an embodiment;

FIG. 4 is a structural diagram depicting a lateral device in accordancewith an embodiment;

FIG. 5 is a structural diagram depicting a lateral device in accordancewith an embodiment;

FIG. 6 is a structural diagram depicting a lateral device in accordancewith an embodiment;

FIG. 7 is a structural diagram depicting a lateral device in accordancewith an embodiment;

FIG. 8 is a structural diagram depicting a lateral device in accordancewith an embodiment;

FIG. 9 is a structural diagram depicting a lateral device in accordancewith an embodiment;

FIG. 10 is a structural diagram depicting a lateral device in accordancewith an embodiment;

FIG. 11 is a structural diagram depicting a lateral device in accordancewith an embodiment;

FIG. 12 is a structural diagram depicting a lateral device in accordancewith an embodiment;

FIG. 13 is a structural diagram depicting a lateral device in accordancewith an embodiment;

FIG. 14 is a structural diagram depicting a lateral device in accordancewith an embodiment;

FIG. 15 is a structural diagram depicting a lateral device in accordancewith an embodiment;

FIG. 16 is a structural diagram depicting a lateral device in accordancewith an embodiment;

FIG. 17 is a structural diagram depicting a lateral device in accordancewith an embodiment;

FIG. 18 is a structural diagram depicting a lateral device in accordancewith an embodiment;

FIG. 19 is a structural diagram depicting a lateral device in accordancewith an embodiment;

FIG. 20 is a structural diagram depicting a lateral device in accordancewith an embodiment;

FIG. 21 is a structural diagram depicting a lateral device in accordancewith an embodiment;

FIG. 22 is a structural diagram depicting a lateral device in accordancewith an embodiment; and

FIG. 23 is a structural diagram depicting a lateral device in accordancewith an embodiment.

DETAILED DESCRIPTION OF SAMPLE EMBODIMENTS

Power switches such as MOSFET devices are widely used as switchingdevices in many electronic applications. In order to minimize conductionand switching power loss, it may be desirable that power MOSFETs for agiven breakdown voltage have low specific on-resistance andcapacitances. Specific on-resistance (Rsp) may be defined as the productof the on-resistance (Ron) and the area (A) of a device. Reduced SurfaceField (RESURF) structures such as double RESURF and Double Conduction(DC) structures may provide lower Rsp than conventional lateral MOSFETstructures. However, such structures may not meet the increasingrequirement of reduced Rsp and capacitances for many new applications.

The use of permanent or fixed charge within insulation regions has beendemonstrated as advantageous in the fabrication of semiconductor devicessuch as depletion mode vertical double-diffusedmetal-oxide-semiconductor (DMOS) transistors and solar cells. Permanentcharges can be supplied, for instance, by the implantation of a selectedatomic species such as Cesium into an insulator, or the use ofdielectric layers such as silicon oxide in combination with plasmaenhanced chemical vapor deposition (CVD) of silicon nitride or AluminumFluoride (AlF3).

A lateral device includes a gate region connected to a drain region by adrift layer. An insulation region adjoins the drift layer between thegate region and the drain region. Permanent charges are embedded in theinsulation region, or the semiconductor/insulator interface, sufficientto cause inversion in the insulation region.

The disclosed innovations, in various embodiments, provide one or moreof at least the following advantages. However, not all of theseadvantages result from every one of the innovations disclosed, and thislist of advantages does not limit the various claimed inventions.

-   -   higher breakdown voltage;    -   charge balancing;    -   uniform electric fields.

The numerous innovative teachings of the present application will bedescribed with particular reference to presently preferred embodiments(by way of example, and not of limitation).

Permanent charges can be incorporated into the construction of highvoltage devices where the permanent charge provides the charge balanceneeded for high breakdown voltage. The device in the followingembodiments is a MOSFET but the design can be applicable to otherdevices such as diodes, JFETs, IGBTs, thyristors and other devices thatcan block voltages.

Lateral structures can make use of permanent charge for charge balance.Under reverse-bias, electric field lines emanating from ionized dopingatoms in the depletion region can be terminated by the permanent chargeresulting in more uniform electric field and higher breakdown voltagecompared to conventional devices.

With reference to FIG. 1, a structural diagram depicts a lateraln-channel transistor 100 with an n-type drift region 116, in accordancewith an embodiment. A backside metallization layer 120 adjoins asubstrate 118. Since this a lateral device, a ground connection will bepresent on the front side of the device. Backside metallization 120 canbe used for a ground connection to substrate 118, and can also be usedto assure good mechanical and thermal connection to a package in whichthe device 100 will be mounted.

Substrate 118 may be typically a p-doped layer of semiconductormaterial, e.g. Silicon. A source diffusion 104 may be separated from thedrift region 116 by a body region 122. A body contact diffusion 124connects to the body region 122. A source and body metallization 102makes ohmic contact to source diffusion 104 and body contact diffusion124. Insulated gate 106 overlies part of the body 122, to invert asurface portion thereof to form a channel when the gate voltage issufficiently positive. A drain metallization 112 makes contact to adrain diffusion 114. The drift region 116 is overlain by an insulatinglayer 108, containing permanent charge 110 (e.g. implanted negativeions) near the semiconductor interface. (Alternatively, the insulatinglayer 108 can be composed of more than one layer of different dielectricmaterials, and trapped charge can also be present at an internaldielectric-dielectric interface.)

At zero bias, the permanent charge 110 in dielectric layer 108 isbalanced mainly by the charge of a shallow inversion layer (not shown)which forms at the silicon-dielectric interface (between layers 108 and116). At reverse bias, the positive depletion charge in the n-driftlayer 116 is balanced by the negative permanent charge 110 and thenegative charge of the p-substrate 118 depletion layer. This provides amore uniform electric field distribution, and hence a higher breakdownvoltage. Furthermore, for a given breakdown voltage, the drift n-layer116 can now be given a higher doping density than conventionalstructures: this advantageously reduces on-resistance.

The charge in the dielectric layer 108 is preferably located at or closeto the silicon-dielectric interface for maximum effectiveness. Chargebalance obtained by using permanent charge in the dielectric layersrather than PN junctions also results in lower capacitances. Anotheradvantage is that fabrication can be simpler and more economical.

FIGS. 2(a), 2(b), and 2(c) show alternative embodiments 200, 201, and203 respectively. In these embodiments, a shallow p-type diffusion 222is added into the drift region 116. The p-surface layer 222 can beelectrically floating, or can be connected to the p-body 122 orsubstrate 118 in some regions of the device. Positive permanent charge218 is disposed within the insulator layer 108, above the p-type surfacelayer 222. In the on-state, electron current flows through the channelinduced by the gate 106 to the drain 112 via the n-type epitaxial driftlayer 116. The positive permanent charge 218 will deplete the p-typesurface layer 222, and may even invert region 222 to provide anadditional inversion layer conduction path between the drain 114 andchannel. This second conduction path reduces the specific on-resistanceRsp of the device.

In the off-state, the permanent charge 218 terminates ionized donors inthe depletion region of surface p-layer 222. This reduces the electricfield seen laterally between the drain 112 and source 104. The permanentcharge 218, in combination with shallow diffusion 222, provides improvedcharge balancing in the off state.

FIGS. 2(b) and 2(c) show modifications of the embodiment of FIG. 2(a),in which no spacing is provided between the P-surface diffusion 222 andthe P-body 122. In FIG. 2(c), there is also no spacing between thediffusion 222 and the drain 114. In the on state the positive permanentcharge 218 partially depletes and inverts surface layer 222 to providean inversion layer conduction path between the drain 114 and channel.

FIG. 3 shows another embodiment 300 which differs from the device shownin FIG. 2(a). In this embodiment the epitaxial layer is either p-type ornot present, and the n-type drift region 308 is formed by an n-type welldiffusion. Again, the permanent charge 218, in combination with shallowdiffusion 222, provides improved charge balancing in the off state.

FIG. 4 shows another embodiment 400. Here too the n-type drift region308 is formed by an n-type well. Permanent charge 110, analogous to thatshown in FIG. 1, provides improved charge balancing.

FIG. 5 shows an alternative embodiment 500, in which an additionalp-type (p-buried) layer 526 is located in the drift region 116. Thep-buried layer 526 can be electrically floating or connected to thep-body 122 or substrate 118 in certain regions of the device. Disposedwithin the insulator layer 108 above the n-type epitaxial layer 116 isnegative permanent charge 110. In the on-state, the electron currentflows to the drain region through the two n-type regions 506 lying aboveand below the buried p-type region 526. The permanent charge 110 and thep-type buried region 526 partially deplete the n-type drift layer 506.In the off-state, depletion charge in the top n-type epitaxial region506 is partially terminated by ionized acceptors in the p-type buriedregion 526 as well as by the permanent charge 110.

FIG. 6 shows an alternative embodiment 600. In this embodiment, a buriedlayer 526, as in FIG. 5, is combined with a shallow P-surface layer 222.In the off-state, depletion charge in the n-type epitaxial region 116 ispartially terminated by ionized acceptors in the two p-type regions 222and 526.

The p-buried layer 526 can be electrically floating or connected to thep-body 122 or substrate 118 in certain regions of the device. Disposedwithin the insulator layer 108 above the P-surface diffusion 222 ispositive permanent charge 218. In the on-state, the electron currentflows to the drain region through the two n-type regions 506 lying aboveand below the buried p-type region 526. The positive permanent charge218 will deplete the p-type surface layer 222, and may even invertregion 222 to provide an additional inversion layer conduction pathbetween the drain 114 and channel. This second conduction path reducesthe specific on-resistance Rsp of the device.

FIGS. 7 and 8 show other embodiments 700 and 800 of the devices shown inFIGS. 5 and 6 respectively, where the n-type epitaxial layer has beenreplaced with an n-type well diffusion 308.

With reference to FIG. 9, a structural diagram depicts another lateraldevice embodiment 900. A trench gate 910, surrounded by a gateinsulation layer 906, is positioned adjacent to the source region 104and body 122. A source and body metallization 102 contacts the sourceregion 104 and body contact diffusion 122. In the on-state, theelectrons flow vertically downward through the channel (formed wherebody 122 is nearest the gate electrode 910) into the n-drift layer 116.The n-type layer 116 can be an epitaxial layer or an n-well formed on orin p-substrate 118.

FIG. 10 shows yet another embodiment 1000. This embodiment uses a sourceand gate structure like that of FIG. 9, in combination with a shallowdiffusion 222 and permanent charge 218 like those of FIG. 2(a) (or (b)or 2(c)), to provide improved off-state characteristics.

FIG. 11 shows another embodiment 1100. Here a different trench gate 1116geometry is used. In the on-state, the electrons flow verticallydownward through the channel (formed where body 122 is nearest the gateelectrode 1116) into the n-drift layer 116.

FIG. 12 shows another embodiment 1200. Note that P surface diffusion 222and permanent charge 218 combine, as in FIG. 2, to provide improvedcharge balancing and lower on-resistance.

FIG. 13 shows yet another lateral device embodiment 1300. In thisembodiment, a source structure 102 like that of FIG. 9 providessubsurface injection, and buried layer 526 cooperates with permanentcharge 110 and substrate 118 to provide charge balancing.

FIG. 14 shows yet another lateral device embodiment 1400. Thisembodiment is generally similar to that of FIG. 13, except that negativepermanent charge 110 has been replaced by p-surface diffusion 222 andpositive permanent charge 218.

FIGS. 15 and 16 show two more embodiments 1500 and 1600, which havesource 102 and gate structure 1116 analogous to the source structures ofFIGS. 11 and 12 but with an additional buried layer 526.

FIGS. 17 and 18 show two more embodiments 1700 and 1800. Here the trenchgate 1714 is a T-shaped structure. Note that the laterally extended partof the T can optionally be self-aligned to the permanent charge.

FIGS. 19 and 20 show two more embodiments 1900 and 2000, which differfrom those of FIGS. 17 and 18 in that the gates 1920 are surrounded byan asymmetrical sidewall dielectric 1928. Since the insulation betweenthe gate electrode and the drift region is made thicker, parasiticgate-drain capacitance Cgd is reduced.

FIG. 21 shows another lateral device embodiment 2100. In thisembodiment, an additional buried layer 2106, in addition to P-surfacelayer 222 and p-type buried layer 526. The combination of these threep-type layers provides improved charge balancing, especially for a verydeep well structure as shown. Note also that this Figure uses a sourcestructure which has a lateral channel, as in FIG. 1.

FIG. 22 shows a lateral device 2200 which has multiple buried layers(like the embodiment of FIG. 21), in combination with a laterallyasymmetrical trench gate as in FIG. 20.

FIG. 23 shows a significantly different lateral device embodiment 2300.This embodiment is still an NMOS device, but is formed in a p epitaxialon a p-substrate structure. An N-type buried layer 2302 is formed at anintermediate depth in a p-type epitaxial layer 2304.

The majority carrier flow operates somewhat differently in thisembodiment, since the P-body adjoins the P-type epi layer 2304. Thevoltage on the gate electrode not only inverts a channel in the bodylayer, but also inverts part of the epi layer 2304 and the p-surfacelayer 222 to form a secondary channel which connects the primary channelto the buried layer 2302 and surface inversion layer created by thepermanent charge 218 in p-surface layer 222.

This embodiment also shows a different drain structure, combining a deepdrain 2314 with a shallow drain 2312. This drain structure can be usedwith other embodiments described, or the simpler drain structure of e.g.FIG. 16 can be used in the embodiment of FIG. 23.

According to some disclosed embodiments, there is provided: A lateralsemiconductor device comprising: a body region connected to a drainregion by a drift region; and permanent charge, sufficient to causeinversion in at least a portion of said drift layer at the interfacebetween the drift layer and the insulation region.

According to some disclosed embodiments, there is provided: A lateralsemiconductor device comprising: a drift region between a body regionand a drain region, said drift region having a first conductivity type;a surface region on an upper surface of the drift region, said surfaceregion having a second conductivity type; an insulation region over thesurface region; and permanent charges embedded in the insulation region,wherein said permanent charges at least partly inverts the surfaceregion.

According to some disclosed embodiments, there is provided: A lateralsemiconductor device comprising: a carrier source; a semiconductor driftregion laterally interposed between said source and a drain region; andpermanent charge, embedded in at least one insulating region whichvertically adjoins said drift region, which balances charge in saiddrift region when said drift region is depleted.

According to some disclosed embodiments, there is provided: A lateralsemiconductor device comprising: a first-conductivity-type sourceregion; a second-conductivity-type body region interposed between saidsource region and a semiconductor drift region; said drift region beinglaterally interposed between said body region and afirst-conductivity-type drain region; and permanent charge, embedded inat latest one insulating region which vertically adjoins said driftregion, which has a polarity [e.g. negative] which tends to deplete alayer of said drift region in proximity to said insulating region.

Modifications and Variations

As will be recognized by those skilled in the art, the innovativeconcepts described in the present application can be modified and variedover a tremendous range of applications, and accordingly the scope ofpatented subject matter is not limited by any of the specific exemplaryteachings given. It is intended to embrace all such alternatives,modifications and variations that fall within the spirit and broad scopeof the appended claims.

The doping levels needed to achieve high breakdown and low-resistanceare governed by the well-known charge balance condition. The specificelectrical characteristics of devices fabricated using the methodsdescribed in this disclosure depend on a number of factors including thethickness of the layers, their doping levels, the materials being used,the geometry of the layout, etc. One of ordinary skill in the art willrealize that simulation, experimentation, or a combination thereof canbe used to determine the specific design parameters needed to operate asintended.

While the figures shown in this disclosure are qualitatively correct,the geometries used in practice may differ and should not be considereda limitation in any way. It is understood by those having ordinary skillin the art that the actual cell layout will vary depending on thespecifics of the implementation and any depictions illustrated hereinshould not be considered a limitation in any way.

While only n-channel MOSFETs are shown herein, p-channel MOSFETs arerealizable with this invention simply by changing the polarity of thepermanent charge and swapping n-type and p-type regions in any of thefigures.

Additionally, while only MOSFETs are shown, many other device structuresare implementable using the invention including diodes, IGBTs,thyristors, JFETs, BJTs and the like.

For another example, other source structures can optionally be used, inaddition to the numerous embodiments of source structure shown anddescribed above.

For another example, other drain structures can optionally be used, inaddition to the various embodiments shown and described above.

It should be noted in the above drawings, the positive and negativepermanent charge were drawn for illustration purposes only. It isunderstood that the charge can be in the dielectric (oxide), at theinterface between the silicon and oxide, inside the silicon layer, at aninterface within the dielectric, or a combination of all these cases.

The following applications may contain additional information andalternative modifications: Attorney Docket No. MXP-14P, Ser. No.61/125,892 filed Apr. 29, 2008; Attorney Docket No. MXP-15P, Ser. No.61/058,069 filed Jun. 2, 2008 and entitled “Edge Termination for DevicesContaining Permanent Charge”; Attorney Docket No. MXP-16P, Ser. No.61/060,488 filed Jun. 11, 2008 and entitled “MOSFET Switch”; AttorneyDocket No. MXP-21P, Ser. No. 61/084,642 filed Jul. 30, 2008 and entitled“Silicon on Insulator Devices Containing Permanent Charge”; AttorneyDocket No. MXP-18P, Ser. No. 61/076,767 filed Jun. 30, 2008 and entitled“Trench-Gate Power Device”; Attorney Docket No. MXP-19P, Ser. No.61/080,702 filed Jul. 15, 2008 and entitled “A MOSFET Switch”; AttorneyDocket No. MXP-17P, Ser. No. 61/074,162 filed Jun. 20, 2008 and entitled“MOSFET Switch”; Attorney Docket No. MXP-13P, Ser. No. 61/065,759 filedFeb. 14, 2009 and entitled “Highly Reliable Power MOSFET with RecessedField Plate and Local Doping Enhanced Zone”; Attorney Docket No.MXP-22P, Ser. No. 61/027,699 filed Feb. 11, 2008 and entitled “Use ofPermanent Charge in Trench Sidewalls to Fabricate Un-Gated CurrentSources, Gate Current Sources, and Schottky Diodes”; Attorney Docket No.MXP-23P, Ser. No. 61/028,790 filed Feb. 14, 2008 and entitled “TrenchMOSFET Structure and Fabrication Technique that Uses ImplantationThrough the Trench Sidewall to Form the Active Body Region and theSource Region”; Attorney Docket No. MXP-24P, Ser. No. 61/028,783 filedFeb. 14, 2008 and entitled “Techniques for Introducing and Adjusting theDopant Distribution in a Trench MOSFET to Obtain Improved DeviceCharacteristics”; Attorney Docket No. MXP-25P, Ser. No. 61/091,442 filedAug. 25, 2008 and entitled “Devices Containing Permanent Charge”;Attorney Docket No. MXP-27P, Ser. No. 61/118,664 filed Dec. 1, 2008 andentitled “An Improved Power MOSFET and Its Edge Termination”; andAttorney Docket No. MXP-28P, Ser. No. 61/122,794 filed Dec. 16, 2008 andentitled “A Power MOSFET Transistor”.

None of the description in the present application should be read asimplying that any particular element, step, or function is an essentialelement which must be included in the claim scope: THE SCOPE OF PATENTEDSUBJECT MATTER IS DEFINED ONLY BY THE ALLOWED CLAIMS. Moreover, none ofthese claims are intended to invoke paragraph six of 35 USC section 112unless the exact words “means for” are followed by a participle.

The claims as filed are intended to be as comprehensive as possible, andNO subject matter is intentionally relinquished, dedicated, orabandoned.

1-38. (canceled)
 39. A lateral semiconductor device, comprising: afirst-conductivity-type source region; a second-conductivity-type bodyregion, interposed between said source region and afirst-conductivity-type drift region, said body region beingcapacitively coupled to a gate electrode lying at least partially in atrench; a first-conductivity-type drain region; permanent chargeembedded in an insulating region which vertically adjoins said driftregion, said permanent charge having a polarity which tends to depleteadjacent semiconductor material; wherein said gate electrode isseparated from the adjacent semiconductor material by a layer of gateoxide; and wherein the gate oxide adjacent to said drift region isthicker than the gate oxide adjacent to said body region.
 40. Thelateral semiconductor device of claim 39, further comprising asecond-conductivity-type semiconductor substrate under said driftregion.
 41. The lateral semiconductor device of claim 39, furthercomprising a second-conductivity-type body contact region adjacent tosaid source region and said body region.
 42. The lateral semiconductordevice of claim 39, wherein said first conductivity type is N-type. 43.The lateral semiconductor device of claim 39, wherein said permanentcharge comprises cesium ions.
 44. The lateral semiconductor device ofclaim 39, wherein the lateral semiconductor device consists primarily ofsilicon.
 45. A lateral semiconductor device, comprising: afirst-conductivity-type source region; a second conductivity type bodyregion which is interposed between said source region and afirst-conductivity-type drift region; a trench gate which is laterallyinterposed between said source region and at least a portion of saiddrift region, and which is capacitively coupled to said body region; afirst gate oxide layer between said body region and said trench gate; asecond gate oxide layer separating said trench gate region; asecond-conductivity-type buried region in said drift region; permanentcharges, embedded in an insulating region which vertically joins seconddrift region, having a polarity which tends to deplete adjacent portionsof said drift region; and a first-conductivity-type drain region. 46.The lateral semiconductor device of claim 45, further comprising asecond-conductivity-type semiconductors substrate under said driftregion.
 47. The lateral semiconductor device of claim 45, furthercomprising a second-conductivity-type body contact region adjacent tosaid source region and said body region.
 48. The lateral semiconductordevice of claim 45, wherein said first conductivity type is N-type. 49.The lateral semiconductor device of claim 45, wherein said permanentcharge comprises cesium ions.
 50. The lateral semiconductor device ofclaim 45, wherein the lateral semiconductor device consists primarily ofsilicon.
 51. A lateral semiconductor device, comprising: afirst-conductivity-type source region; a second-conductivity-type bodyregion which is interposed between said source region and afirst-conductivity-type drift region; a trench gate, capacitivelycoupled to said body region, which laterally separates said sourceregion and said body region from at least a portion of said driftregion; a first gate oxide layer which separates said trench gate fromsaid source region and said body region, and a second gate oxide layerwhich separates said trench gate from said drift region; wherein saidsecond gate oxide layer is thicker than said first gate oxide layer; asecond-conductivity-type buried region in said drift region; asecond-conductivity-type surface region on the surface of said driftregion; wherein said surface region and said buried region are laterallyinterposed between said source region and a first-conductivity-typedrain region; and permanent charge, embedded in an insulating regionwhich vertically adjoins at least a portion of said surface region,having a polarity which tends to invert adjacent portions of saidsurface region.
 52. The lateral semiconductor device of claim 51,further comprising a second-conductivity-type semiconductors substrateunder said drift region.
 53. The lateral semiconductor device of claim51, further comprising a second-conductivity-type body contact regionadjacent to said source region and said body region.
 54. The lateralsemiconductor device of claim 51, wherein said first conductivity typeis N-type.
 55. The lateral semiconductor device of claim 51, whereinsaid permanent charge comprises cesium ions.
 56. The lateralsemiconductor device of claim 51, wherein the lateral semiconductordevice consists primarily of silicon.